The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 21, 2018
Filed:
Jul. 04, 2013
Applicant:
Massachusetts Institute of Technology, Cambridge, MA (US);
Inventors:
Jonathan E. Halpert, Cambridge, MA (US);
Jonathan Tischler, Sharon, MA (US);
Moungi G. Bawendi, Cambridge, MA (US);
Vladimir Bulovic, Lexington, MA (US);
Assignee:
MASSACHUSETTS INSTITUTE OF TECHNOLOGY, Cambridge, MA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C09K 11/06 (2006.01); C09K 11/02 (2006.01); C09K 11/56 (2006.01); C09K 11/88 (2006.01);
U.S. Cl.
CPC ...
C09K 11/06 (2013.01); C09K 11/025 (2013.01); C09K 11/565 (2013.01); C09K 11/883 (2013.01); C09K 2211/10 (2013.01);
Abstract
A composition can include a first moiety capable of being excited to an excited state, and a second moiety capable of accepting excited state energy from the first moiety. The second moiety is capable of emitting light with a FWHM of 15 nm or less when excited. The second moiety can be a J-aggregate and the first moiety can be a semiconductor nanocrystal.