The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 14, 2018

Filed:

Dec. 01, 2014
Applicants:

Robert Bosch Gmbh, Stuttgart, DE;

Seg Automotive Germany Gmbh, Stuttgart, DE;

Inventors:

Markus Baur, Rottenburg, DE;

Alfred Goerlach, Kusterdingen, DE;

Assignees:

Robert Bosch GmbH, Stuttgart, DE;

SEG Automotive Germany GmbH, Stuttgart, DE;

Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H02M 7/217 (2006.01); H03K 17/0814 (2006.01); H03K 17/30 (2006.01);
U.S. Cl.
CPC ...
H02M 7/217 (2013.01); H03K 17/08142 (2013.01); H03K 17/302 (2013.01); H03K 2017/307 (2013.01); H03K 2217/0081 (2013.01);
Abstract

A rectifier circuit is described, which includes a cathode terminal, an anode terminal and, between the cathode terminal and the anode terminal, an electronic circuit which includes at least one MOSFET transistor including an integrated inverse diode, the drain-source breakdown voltage of the MOSFET transistor operated in the avalanche mode corresponding to the clamping voltage between the cathode terminal and the anode terminal of the rectifier circuit. In addition, a method is provided for operating a rectifier circuit which contains a cathode terminal, an anode terminal and, between the cathode terminal and the anode terminal, at least one MOSFET transistor including an integrated inverse diode, the drain-source breakdown voltage of the MOSFET transistor being selected in accordance with the clamping voltage between the cathode terminal and the anode terminal, and the MOSFET transistor being operated in the avalanche mode.


Find Patent Forward Citations

Loading…