The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 14, 2018

Filed:

Sep. 19, 2017
Applicant:

Landmark Optoelectronics Corporation, Tainan, TW;

Inventors:

Shu-Wei Chiu, Tainan, TW;

Yin-Jie Ma, Tainan, TW;

Wei Lin, Tainan, TW;

Assignee:

Landmark Optoelectronics Corporation, Tainan Science-Based Industrial Park, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01S 5/16 (2006.01); H01S 5/32 (2006.01); H01S 5/22 (2006.01); H01S 5/20 (2006.01);
U.S. Cl.
CPC ...
H01S 5/3211 (2013.01); H01S 5/164 (2013.01); H01S 5/2031 (2013.01); H01S 5/222 (2013.01);
Abstract

A semiconductor laser apparatus is provided and has a substrate, a first type cladding layer, a first type waveguide layer, an active layer, a second type waveguide layer, a second type cladding layer, and a capping layer disposed in sequence. The active layer has a light producing portion and a light emitting portion. A laser produced by the light producing portion, emits along a direction from the light producing portion toward the light emitting portion. The light emitting portion includes a first inactive region, a light emitting region, and a second inactive region. A refractive index of the light emitting region is lower than a refractive index of the first inactive region, the refractive index of the light emitting region is lower than a refractive index of the second inactive region, and width of a first part of the light emitting region continuously increases along the direction.


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