The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 14, 2018
Filed:
Jun. 27, 2017
Ushio Denki Kabushiki Kaisha, Tokyo, JP;
USHIO DENKI KABUSHIKI KAISHA, Tokyo, JP;
Abstract
Disclosed herein is a semiconductor laser element capable of suppressing a wavelength dependency of a reflection ratio. A reflective film of the semiconductor laser element includes an Llayer arranged at a first position from the end faces of the resonator and having a refractive index of n1; and a periodic structure configured by layering a plurality of pairs of an Llayer and an Llayer. The Llayer has a refractive index of n2, and the Llayer has a refractive index of n3, where n2<n3. The L1 layer has a linear expansion coefficient of ±30% with respect to a linear expansion coefficient of the substrate and is made of a film having an optical film thickness thinner than λ/4. An Llayer arranged at a second position from the end faces of the resonator is made of a film having an optical film thickness thinner than λ/4.