The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 14, 2018

Filed:

Oct. 22, 2015
Applicant:

Nichia Corporation, Anan-shi, Tokushima, JP;

Inventors:

Akinori Yoneda, Anan, JP;

Shinya Sonobe, Tokushima, JP;

Hiroaki Yuto, Anan, JP;

Assignee:

NICHIA CORPORATION, Anan-Shi, Tokushima, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01S 5/022 (2006.01); C23C 14/18 (2006.01); C23C 14/34 (2006.01); C25D 7/12 (2006.01); C25D 3/38 (2006.01); C25D 5/02 (2006.01);
U.S. Cl.
CPC ...
H01S 5/02272 (2013.01); C23C 14/185 (2013.01); C23C 14/34 (2013.01); C25D 3/38 (2013.01); C25D 5/022 (2013.01); C25D 7/123 (2013.01); H01S 5/02212 (2013.01);
Abstract

The method includes the steps of: preparing a single crystal SiC including an upper surfaceand a lower surfaceand provided with a micropipepenetrating from the upper surfaceto the lower surface; forming a first seed layermade of a metal material on the upper surfaceof the single crystal SiC; and forming a first plated layeron the first seed layerso as to close an upper end of the micropipe, using an electroplating method.


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