The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 14, 2018

Filed:

Feb. 20, 2018
Applicants:

Seoul National University R&db Foundation, Seoul, KR;

Incheon University Industry Academic Cooperation Foundation, Incheon, KR;

Inventors:

Byung-Gook Park, Seoul, KR;

Sung Hun Jin, Gyeonggi-do, KR;

Sunghun Jung, Daegu, KR;

Minhwi Kim, Seoul, KR;

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/088 (2006.01); H01L 45/00 (2006.01); H01L 27/24 (2006.01);
U.S. Cl.
CPC ...
H01L 45/1273 (2013.01); H01L 27/2472 (2013.01); H01L 45/04 (2013.01); H01L 45/1233 (2013.01); H01L 45/16 (2013.01);
Abstract

A resistive random access memory device having a nano-scale tip and a nanowire is provided. A memory array using the same also is provided and fabrication method thereof. A technique is provided for forming a bottom electrode having an upwardly protruding tapered tip structure through etching a semiconductor substrate and a top electrode being formed of a nanowire and a technique forming a resistive random access memory device at a location intersected with each other in order that an area of each memory cell is minimized and that an electric field is focused on the tip of the bottom electrode across the top electrode.


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