Resistive memory device including a lateral air gap around a memory element and method of making thereof

Abstract

First electrically conductive lines can be formed over a substrate. A two-dimensional array of vertical stacks can be formed, each of which includes a first electrode, an in-process resistive memory material portion, and a second electrode over the first electrically conductive line. The sidewalls of the in-process resistive memory material portions are laterally recessed with respect to sidewalls of the first electrode and the second electrode to form resistive memory material portions having reduced lateral dimensions. A dielectric material layer is formed by an anisotropic deposition to form annular cavities that laterally surround a respective one of the resistive memory material portions. Second electrically conductive lines can be formed on the second electrodes.