The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 14, 2018
Filed:
Jul. 11, 2017
Xiamen Sanan Optoelectronics Technology Co., Ltd., Xiamen, CN;
Cheng Meng, Xiamen, CN;
Chun-Yi Wu, Xiamen, CN;
Ching-Shan Tao, Xiamen, CN;
Duxiang Wang, Xiamen, CN;
XIAMEN SANAN OPTOELECTRONICS TECHNOLOGY CO., LTD., Xiamen, CN;
Abstract
A light-emitting diode (LED) structure and a fabrication method thereof effectively enhance external extraction efficiency of the LED, which includes: a light-emitting epitaxial laminated layer, a transparent dielectric layer, and a transparent conductive layer forming a reflectivity-enhancing system; and a metal reflective layer. The light-emitting epitaxial laminated layer has opposite first and second surfaces, and includes an n-type semiconductor layer, a light emitting layer, and a p-type semiconductor layer. The transparent dielectric layer is on the second surface, inside which are conductive holes. The transparent conductive layer is located on one side surface of the transparent dielectric layer distal from the light-emitting epitaxial laminated layer. The metal reflective layer is located on one side surface of the transparent conductive layer distal from the transparent dielectric layer. Refractivity of the transparent dielectric layer is less than that of the light-emitting epitaxial laminated layer and the transparent conductive layer.