The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 10050133 B1

Date of Patent:

Aug. 14, 2018

Filed:

Jun. 02, 2016

Application of thin insulating film layer in semiconductor device and method of manufacturing semiconductor device

Applicant:

Fuji Electric Co., Ltd., Kanagawa, JP;

Inventors:

Eri Ogawa, Matsumoto, JP;

Takashi Yoshimura, Matsumoto, JP;

Assignee:

FUJI ELECTRIC CO., LTD., Kanagawa, JP;

Attorney:

Primary Examiner:

Shahed Ahmed

Int. Cl.

CPC ...

H01L 29/739 (2006.01); H01L 29/868 (2006.01); H01L 21/02 (2006.01); H01L 21/263 (2006.01); H01L 21/28 (2006.01); H01L 29/06 (2006.01); H01L 29/32 (2006.01); H01L 29/40 (2006.01); H01L 29/51 (2006.01); H01L 29/66 (2006.01); H01L 29/861 (2006.01);

U.S. Cl.

CPC ...

H01L 29/7391 (2013.01); H01L 21/02225 (2013.01); H01L 21/02255 (2013.01); H01L 21/02282 (2013.01); H01L 21/2636 (2013.01); H01L 21/28158 (2013.01); H01L 29/0619 (2013.01); H01L 29/32 (2013.01); H01L 29/404 (2013.01); H01L 29/517 (2013.01); H01L 29/66128 (2013.01); H01L 29/7395 (2013.01); H01L 29/7397 (2013.01); H01L 29/868 (2013.01); H01L 29/8611 (2013.01);

Abstract

In a pin diode, a new means for a soft recovery other than the means for the soft recovery using an anode layer with a low concentration and a local lifetime control is provided. A semiconductor device comprising a drift layer of a first conductivity type provided on a semiconductor substrate of a first conductivity type, a front-surface-side region of a second conductivity type provided on a front surface side of the drift layer, an insulating-film layer provided on a front surface side of the front-surface-side region with a thickness thinner than a natural oxide film, and a metal layer provided on a front surface side of the insulating-film layer is provided.

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