The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 14, 2018
Filed:
Jul. 31, 2017
Semiconductor Energy Laboratory Co., Ltd., Atsugi-shi, Kanagawa-ken, JP;
Shunpei Yamazaki, Tokyo, JP;
Akihisa Shimomura, Kanagawa, JP;
Yasumasa Yamane, Kanagawa, JP;
Yuhei Sato, Kanagawa, JP;
Tetsuhiro Tanaka, Kanagawa, JP;
Masashi Tsubuku, Kanagawa, JP;
Toshihiko Takeuchi, Kanagawa, JP;
Ryo Tokumaru, Kanagawa, JP;
Mitsuhiro Ichijo, Kanagawa, JP;
Satoshi Toriumi, Kanagawa, JP;
Takashi Ohtsuki, Kanagawa, JP;
Toshiya Endo, Kanagawa, JP;
Semiconductor Energy Laboratory Co., Ltd., Atsugi-shi, Kanagawa-ken, JP;
Abstract
A change in electrical characteristics is suppressed and reliability in a semiconductor device using a transistor including an oxide semiconductor is improved. One feature resides in forming an oxide semiconductor film over an oxygen-introduced insulating film, and then forming the source and drain electrodes with an antioxidant film thereunder. Here, in the antioxidant film, the width of a region overlapping with the source and drain electrodes is longer than the width of a region not overlapping with them. The transistor formed as such has less defects in the channel region, which will improve reliability of the semiconductor device.