The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 14, 2018
Filed:
Jul. 18, 2017
Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;
Bok-Young Lee, Seoul, KR;
Sung-Woo Kang, Suwon-si, KR;
Sang-Hyun Lee, Hwaseong-si, KR;
Hak-Yoon Ahn, Seoul, KR;
Young-Mook Oh, Hwaseong-si, KR;
In-Keun Lee, Anyang-si, KR;
Seong-Han Oh, Namyangju-si, KR;
Young-Hun Choi, Incheon, KR;
Samsung Electronics Co., Ltd., Suwon-Si, Gyeonggi-do, KR;
Abstract
A semiconductor device includes an active region in a shape of a fin extending in a first direction, the fin having source/drain regions spaced apart therein, gate structures crossing the fin between the source/drain regions, each including a gate electrode, a first contact structure in electrical contact with a first source/drain region, the first contact structure including a first lower contact and a first upper contact directly thereon, a second contact structure in electrical contact with a gate electrode of a gate structure, the second contact structure including a second lower contact and a second upper contact directly thereon, and a third contact structure in electrical contact with a gate electrode of a second gate structure and in electrical contact with a second source drain region, the third contact structure including a third lower contact and a third upper contact directly thereon.