The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 14, 2018
Filed:
Feb. 03, 2017
Applicant:
Commissariat a L'energie Atomique ET Aux Energies Alternatives, Paris, FR;
Inventor:
Erwan Morvan, Montagne, FR;
Assignee:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/778 (2006.01); H01L 29/20 (2006.01); H01L 29/06 (2006.01); H01L 29/207 (2006.01); H01L 29/205 (2006.01);
U.S. Cl.
CPC ...
H01L 29/207 (2013.01); H01L 29/0607 (2013.01); H01L 29/2003 (2013.01); H01L 29/205 (2013.01); H01L 29/7786 (2013.01);
Abstract
A high electron mobility heterojunction transistor, including a first GaN layer; a second, p-doped GaN layer on top of the first layer, including magnesium as a p-type dopant, the concentration of which is at least equal to 5*10cmand at most equal to 2*10cm, the thickness of the second GaN layer being between 20 and 50 nm; a third, n-doped GaN layer on top of the second GaN layer in order to form a depleted p-n junction; a fourth GaN layer, which is not intentionally doped, on top of the third GaN layer; a semiconductor layer plumb with the fourth GaN layer, which is not intentionally doped, in order to form an electron gas layer.