The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 14, 2018
Filed:
Jun. 13, 2014
Applicant:
Sumitomo Electric Industries, Ltd., Osaka-shi, JP;
Inventors:
Assignee:
Sumitomo Electric Industries, Ltd., Osaka-shi, JP;
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/36 (2006.01); H01L 29/16 (2006.01); H01L 21/02 (2006.01); H01L 21/04 (2006.01); H01L 29/66 (2006.01); H01L 29/78 (2006.01); H01L 29/06 (2006.01); H01L 21/306 (2006.01); H01L 21/3065 (2006.01); H01L 21/311 (2006.01);
U.S. Cl.
CPC ...
H01L 29/1608 (2013.01); H01L 21/02002 (2013.01); H01L 21/0262 (2013.01); H01L 21/02236 (2013.01); H01L 21/02378 (2013.01); H01L 21/02428 (2013.01); H01L 21/02529 (2013.01); H01L 21/046 (2013.01); H01L 21/047 (2013.01); H01L 21/0475 (2013.01); H01L 21/3065 (2013.01); H01L 21/30625 (2013.01); H01L 21/31111 (2013.01); H01L 29/0619 (2013.01); H01L 29/66068 (2013.01); H01L 29/7811 (2013.01); H01L 21/02255 (2013.01);
Abstract
A silicon carbide semiconductor substrate includes: a base substrate that has a main surface having an outer diameter of not less than 100 mm and that is made of single-crystal silicon carbide; and an epitaxial layer formed on the main surface. The silicon carbide semiconductor substrate has an amount of warpage of not less than −100 μm and not more than 100 μm when a substrate temperature is a room temperature and has an amount of warpage of not less than −1.5 mm and not more than 1.5 mm when the substrate temperature is 400° C.