The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 14, 2018

Filed:

May. 13, 2014
Applicants:

Commissariat a L'energie Atomique ET Aux Energies Alternatives, Paris, FR;

Aledia, Grenoble, FR;

Inventors:

Philippe Gilet, Teche, FR;

Alexei Tchelnokov, Meylan, FR;

Ivan Christophe Robin, Grenoble, FR;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 27/15 (2006.01); H01L 33/18 (2010.01); H01L 33/32 (2010.01); H01L 33/08 (2010.01); H01L 33/00 (2010.01); H01L 33/14 (2010.01); B82Y 20/00 (2011.01); H01L 33/24 (2010.01);
U.S. Cl.
CPC ...
H01L 27/15 (2013.01); H01L 33/18 (2013.01); H01L 33/32 (2013.01); B82Y 20/00 (2013.01); H01L 33/007 (2013.01); H01L 33/08 (2013.01); H01L 33/14 (2013.01); H01L 33/24 (2013.01);
Abstract

The invention relates to an optoelectronic device () including: a semiconductor substrate () doped with a first conductivity type; semiconductor contact pads () or a semiconductor layer, in contact with a surface of the substrate, doped with a second conductivity type opposite to the first type; conical or frusto-conical wired semiconductor elements (), doped with the first conductivity type, each element being in contact with one of the contact pads or with the layer; light-emitting semiconductor portions (), each portion at least partially covering one of the semiconductor elements; and a circuit (S) for polarizing the contact pads () or the layer. The contact pads or the layer are selected among: aluminum nitride, boron nitride, silicon carbide, magnesium nitride, gallium and magnesium nitride, or a combination of same and the nitride compounds thereof.


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