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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 10050052 B1

PDFFull Text
Date of Patent:
Aug. 14, 2018

Filed:

Aug. 08, 2016

Semiconductor device and manufacturing method for the same

Applicant:

SK Hynix Inc., Gyeonggi-do, KR;

Inventors:

Myeong Seong Yoon, Incheon, KR;

Il Seok Seo, Chungcheongbuk-do, KR;

Assignee:

SK Hynix Inc., Gyeonggi-do, KR;

Attorney:

IP & T Group LLP

Primary Examiner:

Su C Kim

Assistant Examiner:

David S Wilbert

Int. Cl.
CPC ...
H01L 27/115 (2017.01); H01L 21/28 (2006.01); H01L 21/311 (2006.01); H01L 27/11578 (2017.01); H01L 27/11565 (2017.01); H01L 27/11582 (2017.01);
U.S. Cl.
CPC ...
H01L 27/11578 (2013.01); H01L 21/28282 (2013.01); H01L 21/31144 (2013.01); H01L 27/11565 (2013.01); H01L 27/11582 (2013.01);
Abstract

A semiconductor device includes interlayer insulating layers and conductive patterns alternately stacked over a pipe gate, a first slit and a second slit penetrating the interlayer insulating layers and the conductive patterns and crossing each other, an etch stop pad groove overlapping an intersection of the first slit and the second slit, arranged in the pipe gate, and connected to the first slit or the second slit, and slit insulating layers filling the first slit, the second slit and the etch stop pad groove.

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Quick Actions:

Yoon, Myeong. (2018). Semiconductor device and manufacturing method for the same (U.S. Patent No. 10050052). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/10050052

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