The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 14, 2018
Filed:
Sep. 19, 2017
Renesas Electronics Corporation, Tokyo, JP;
Hideaki Yamakoshi, Tokyo, JP;
RENESAS ELECTRONICS CORPORATION, Tokyo, JP;
Abstract
A semiconductor device that can evacuate the information in a DRAM automatically at the time of power supply cutoff is provided. A memory cell includes a DRAM cell that holds information at a storage node, a nonvolatile memory cell, and a transistor. The nonvolatile memory cell holds information by use of the first threshold voltage as an erase state and the second threshold voltage as a write state, and shifts to the write state by a write voltage being applied in the erase state. The transistor selects whether or not to apply the write voltage (voltage of a write voltage line) to the nonvolatile memory cell according to the voltage level at the storage node of the DRAM cell.