The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 14, 2018
Filed:
Oct. 21, 2016
Applicant:
Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;
Inventors:
Dong-jin Lee, Seoul, KR;
Sang-kwan Kim, Hwaseong-si, KR;
Ji-eun Lee, Suwon-si, KR;
Sung-hak Cho, Hwaseong-si, KR;
Seok-hyang Kim, Seoul, KR;
So-yeon Shin, Incheon, KR;
Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/108 (2006.01); H01L 21/28 (2006.01); H01L 23/528 (2006.01); H01L 29/08 (2006.01); H01L 29/423 (2006.01); H01L 29/49 (2006.01); H01L 29/51 (2006.01);
U.S. Cl.
CPC ...
H01L 27/10823 (2013.01); H01L 21/28088 (2013.01); H01L 23/528 (2013.01); H01L 27/10814 (2013.01); H01L 27/10852 (2013.01); H01L 27/10876 (2013.01); H01L 27/10894 (2013.01); H01L 29/0847 (2013.01); H01L 29/4236 (2013.01); H01L 29/4966 (2013.01); H01L 29/517 (2013.01);
Abstract
Semiconductor devices are provided. A semiconductor device includes a substrate, and a source/drain region in the substrate. Moreover, the semiconductor device includes a gate structure in a recess in the substrate. The gate structure includes a liner that includes a first portion and a second portion on the first portion. The second portion is closer, than the first portion, to the source/drain region. The second portion includes a metal alloy. Methods of forming a semiconductor device are also provided.