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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 10049883 B1

PDFFull Text
Date of Patent:
Aug. 14, 2018

Filed:

Apr. 26, 2017

Mram dry etching residue removal composition, method of producing magnetoresistive random access memory, and cobalt removal composition

Applicant:

Fujifilm Corporation, Minato-ku, Tokyo, JP;

Inventors:

Keeyoung Park, Shizuoka, JP;

Atsushi Mizutani, Shizuoka, JP;

Assignee:

FUJIFILM CORPORATION, Tokyo, JP;

Attorney:

Solaris Intellectual Property Group, PLLC

Primary Examiner:

Duy Vu N Deo

Int. Cl.
CPC ...
H01L 21/304 (2006.01); C11D 17/08 (2006.01); C11D 3/04 (2006.01); C11D 3/26 (2006.01); C11D 3/30 (2006.01); H01L 21/027 (2006.01); H01L 43/12 (2006.01); H01L 27/105 (2006.01); B41N 3/08 (2006.01); G03F 7/40 (2006.01);
U.S. Cl.
CPC ...
H01L 21/304 (2013.01); C11D 3/04 (2013.01); C11D 3/26 (2013.01); C11D 3/30 (2013.01); C11D 17/08 (2013.01); H01L 21/027 (2013.01); H01L 27/105 (2013.01); H01L 43/12 (2013.01); B41N 3/08 (2013.01); G03F 7/40 (2013.01);
Abstract

An object is to provide an MRAM dry etching residue removal composition capable of removing dry etching residues while suppressing damage to a substrate containing a specific metal in a step of producing an MRAM, a method of producing a magnetoresistive random access memory using the same, and a cobalt removal composition having excellent cobalt removability. The MRAM dry etching residue removal composition of the present invention contains a strong oxidizing agent and water. In addition, the cobalt removal composition of the present invention contains orthoperiodic acid and water.

Find Patent Forward Citations

Park, Keeyoung. (2018). Mram dry etching residue removal composition, method of producing magnetoresistive random access memory, and cobalt removal composition (U.S. Patent No. 10049883). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/10049883

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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