The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 14, 2018
Filed:
May. 01, 2017
Infineon Technologies Ag, Neubiberg, DE;
Ravi Keshav Joshi, Villach, AT;
Romain Esteve, Villach, AT;
Markus Kahn, Rangersdorf, AT;
Kurt Pekoll, Villach, AT;
Juergen Steinbrenner, Noetsch, AT;
Gerald Unegg, Villach, AT;
Infineon Technologies AG, Neubiberg, DE;
Abstract
A silicon-carbide substrate that includes: a doped silicon-carbide contact region directly adjoining a main surface of the substrate, and a dielectric layer covering the main surface is provided. A protective layer is formed on the silicon-carbide substrate such that the protective layer covers the dielectric layer and exposes the doped silicon-carbide contact region at the main surface. A metal layer that conforms to the protective layer and directly contacts the exposed doped silicon-carbide contact region is deposited. A first rapid thermal anneal process is performed. A thermal budget of the first rapid thermal anneal process is selected to cause the metal layer to form a silicide with the doped silicon-carbide contact region during the first rapid thermal anneal process without causing the metal layer to form a silicide with the protective layer during the first rapid thermal anneal process.