The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 14, 2018
Filed:
Feb. 12, 2016
Applicant:
Hitachi Kokusai Electric Inc., Tokyo, JP;
Inventor:
Akito Hirano, Toyama, JP;
Assignee:
Kokusai Electric Corporation, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C23C 16/34 (2006.01); H01L 21/02 (2006.01); H01J 37/32 (2006.01); H01L 21/321 (2006.01); H01L 21/67 (2006.01); H01L 21/28 (2006.01); H01L 27/11517 (2017.01);
U.S. Cl.
CPC ...
H01L 21/02332 (2013.01); H01J 37/32082 (2013.01); H01J 37/32669 (2013.01); H01L 21/02068 (2013.01); H01L 21/02247 (2013.01); H01L 21/3211 (2013.01); H01L 21/67109 (2013.01); H01L 21/67115 (2013.01); H01L 21/28273 (2013.01); H01L 27/11517 (2013.01);
Abstract
To inhibit excessive oxidation and increase oxidation resistance of a polysilicon film on a substrate during recovery process, an oxygen-containing silicon layer present on the substrate is modified into a silicon oxynitride layer or a silicon nitride layer with high nitrogen concentration prior to the recovery process by heating the substrate and supplying active species containing nitrogen radicals and hydrogen radicals for increasing nitrogen content in the silicon oxynitride layer or the silicon nitride layer.