The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 14, 2018

Filed:

Jun. 10, 2016
Applicants:

Brookhaven Science Associates, Llc, Upton, NY (US);

The Regents of the University of California, Oakland, CA (US);

Inventors:

John Smedley, Shirley, NY (US);

Klaus Attenkofer, Riverhead, NY (US);

Susanne Schubert, San Mateo, CA (US);

Mengjia Gaowei, Port Jefferson Station, NY (US);

John Walsh, Sound Beach, NY (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01); H01J 9/42 (2006.01); C23C 14/34 (2006.01); C23C 14/58 (2006.01); H01J 9/12 (2006.01); C23C 14/14 (2006.01); C23C 14/22 (2006.01);
U.S. Cl.
CPC ...
H01J 9/42 (2013.01); C23C 14/14 (2013.01); C23C 14/228 (2013.01); C23C 14/34 (2013.01); C23C 14/5846 (2013.01); H01J 9/12 (2013.01);
Abstract

Technologies are described for methods for fabricating a film component. The methods may comprise sputtering a first film onto a substrate. The first film may include a semiconductor compound material. The semiconductor compound material may include a semi-metal material and one or more alkali material. The methods may further comprise evaporating a second film onto the first film. The second film may include the one or more alkali materials. The one or more alkali materials may catalyze crystallization of the semiconductor compound material in the first film substantially throughout the first film to form the film component in the first layer.


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