The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 14, 2018
Filed:
Dec. 17, 2014
Applicant:
Hewlett Packard Enterprise Development Lp, Houston, TX (US);
Inventors:
Gary Gibson, Palo Alto, CA (US);
R. Stanley Williams, Portola Valley, CA (US);
Assignee:
Hewlett Packard Enterprise Development LP, Houston, TX (US);
Primary Examiner:
Int. Cl.
CPC ...
G11C 11/00 (2006.01); G11C 13/00 (2006.01); H01L 45/00 (2006.01);
U.S. Cl.
CPC ...
G11C 13/0069 (2013.01); G11C 13/0007 (2013.01); H01L 45/08 (2013.01); H01L 45/128 (2013.01); H01L 45/1233 (2013.01); H01L 45/146 (2013.01); G11C 2013/008 (2013.01); G11C 2213/15 (2013.01); G11C 2213/52 (2013.01);
Abstract
A memristor includes a bottom electrode, a top electrode, and an active region disposed therebetween. The active region has an electrically conducting filament in an electrically insulating medium, extending between the bottom electrode and the top electrode. The memristor further includes a temperature gradient element for controlling switching.