The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 14, 2018

Filed:

Feb. 28, 2017
Applicant:

Kabushiki Kaisha Toshiba, Minato-ku, JP;

Inventors:

Chika Tanaka, Fujisawa, JP;

Keiji Ikeda, Kawasaki, JP;

Toshinori Numata, Yokkaichi, JP;

Tsutomu Tezuka, Yokohama, JP;

Assignee:

KABUSHIKI KAISHA TOSHIBA, Minato-ku, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 11/24 (2006.01); G11C 11/4091 (2006.01); G11C 14/00 (2006.01); G11C 11/404 (2006.01);
U.S. Cl.
CPC ...
G11C 11/4091 (2013.01); G11C 11/404 (2013.01); G11C 14/0018 (2013.01);
Abstract

According to one embodiment, a semiconductor memory device includes a memory cell, the cell includes a first capacitor which includes first and second electrodes, and a first transistor which includes first and second terminals and a first control terminal, the first terminal being connected to the first electrode, a first conductive line connected to the second terminal, a second conductive line connected to the second electrode, a sense amplifier, a switch element connected between the first conductive line and the sense amplifier, and a controller turning off the switch element in a write operation, applies a first potential to the first conductive line, and sets a potential of the second conductive line according to a value of write data to be written to the cell.


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