The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 14, 2018
Filed:
Jan. 08, 2013
Sharp Kabushiki Kaisha, Osaka-shi, Osaka, JP;
SHARP KABUSHIKI KAISHA, Sakai, JP;
Abstract
A semiconductor device includes a thin-film transistor (), a terminal portion (), an interlevel insulating layer () including a first insulating layer () which contacts with the surface of a drain electrode (), and a first transparent conductive layer (), a first dielectric layer () and a second transparent conductive layer () formed on the interlevel insulating layer (). The terminal portion () includes a lower conductive layer (), a second semiconductor layer () arranged on a gate insulating layer (), and lower and upper transparent connecting layers (). The gate insulating layer () and the second semiconductor layer () have a contact hole (CH), and their side surfaces located on a side of the contact hole (CH) are aligned with each other. The lower transparent connecting layer () contacts with the lower conductive layer () in the contact hole (CH). And the upper transparent connecting layer () contacts with the lower transparent connecting layer () at the bottom and on the sidewall of the contact hole (CH).