The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 14, 2018
Filed:
May. 30, 2014
Nippon Steel & Sumikin Materials Co., Ltd., Tokyo, JP;
Kiyoshi Kojima, Osato-Gun, JP;
Masashi Nakabayashi, Osato-Gun, JP;
SHOWA DENKO K.K., Tokyo, JP;
Abstract
Provided are a method by which the degrees of the strains of lattices in a plurality of bulk SiC single crystals can be relatively evaluated, and a reference SiC single crystal to be used in the method. Specifically provided are an evaluation method for bulk-shaped silicon carbide single crystals, including: measuring a Raman shift Rof a reference silicon carbide single crystal to be used as a standard; measuring respective Raman shifts Rof a plurality of bulk-shaped silicon carbide single crystals serving as objects to be evaluated; determining differences between each of the Raman shifts Rand the Raman shift R; and relatively comparing the differences, to thereby relatively evaluate magnitudes of strains of lattices in the plurality of bulk-shaped silicon carbide single crystals serving as objects to be evaluated, and a reference silicon carbide single crystal to be used in the method, having a size of 5 mm square or more and 50 mm square or less and a thickness of 100 μm or more and 2,000 μm or less, having a surface roughness Ra of 1 nm or less, and having a micropipe density of 1.0/cmor less and a dislocation density of 5×10/cmor less.