The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 14, 2018
Filed:
May. 20, 2015
Applicant:
University of Houston System, Houston, TX (US);
Inventors:
P. Shiv Halasyamani, Houston, TX (US);
Weiguo Zhang, Houston, TX (US);
Assignee:
UNIVERSITY OF HOUSTON SYSTEM, Houston, TX (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C30B 15/36 (2006.01); C30B 9/06 (2006.01); C30B 15/00 (2006.01); C30B 17/00 (2006.01); C30B 29/22 (2006.01); C30B 11/00 (2006.01); C30B 29/10 (2006.01); H01M 4/58 (2010.01); C30B 29/30 (2006.01);
U.S. Cl.
CPC ...
C30B 9/06 (2013.01); C30B 11/003 (2013.01); C30B 15/00 (2013.01); C30B 17/00 (2013.01); C30B 29/10 (2013.01); C30B 29/22 (2013.01); C30B 29/30 (2013.01); H01M 4/5825 (2013.01);
Abstract
A monolithic crystal having the atomic formula WXYZ, with at least one dimension greater than about 10 mm. A method for top seed, solution growth of a monolithic crystal, wherein the method includes the steps of: preparing a precursor, forming a seed crystal, and forming the monolithic crystal. Some configurations of the method include the differential control of the crystal flux temperature in a furnace and the rotational frequency of a seed crystal in the crystal flux.