The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 07, 2018

Filed:

Apr. 29, 2016
Applicant:

Invensense, Inc., San Jose, CA (US);

Inventors:

Kieran Harney, Andover, MA (US);

Adrianus Maria Lafort, Delft, NL;

Brian Moss, Limerick, IE;

Dion Ivo De Roo, Voorburg, NL;

Assignee:

Invensense, Inc., San Jose, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H04R 3/00 (2006.01); H02M 3/07 (2006.01); H03F 3/183 (2006.01); H03F 3/45 (2006.01); H04R 19/00 (2006.01); H04R 19/04 (2006.01); B81B 7/00 (2006.01); H04R 3/04 (2006.01);
U.S. Cl.
CPC ...
H04R 3/00 (2013.01); B81B 7/008 (2013.01); H02M 3/07 (2013.01); H03F 3/183 (2013.01); H03F 3/45071 (2013.01); H04R 3/04 (2013.01); H04R 19/005 (2013.01); H04R 19/04 (2013.01); H03F 2200/03 (2013.01); H04R 2201/003 (2013.01);
Abstract

Microelectromechanical systems (MEMS) sensors and related bias voltage techniques are described. Exemplary MEMS sensors, such as exemplary MEMS acoustic sensors or microphones described herein can employ one or more bias voltage generators and single-ended or differential amplifier arrangements. Various embodiments are described that can effectively increase the bias voltage available to the sensor element without resorting to high breakdown voltage semiconductor processes. In addition, control of the one or more bias voltage generators in various operating modes is described, based on consideration of a number of factors.


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