The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 07, 2018

Filed:

May. 03, 2017
Applicant:

Qorvo Us, Inc., Greensboro, NC (US);

Inventors:

Baker Scott, San Jose, CA (US);

George Maxim, Saratoga, CA (US);

Hideya Oshima, Santa Clara, CA (US);

Dirk Robert Walter Leipold, San Jose, CA (US);

Eric K. Bolton, Kernersville, NC (US);

Daniel Charles Kerr, Oak Ridge, NC (US);

Assignee:

Qorvo US, Inc., Greensboro, NC (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H03K 17/04 (2006.01); H03K 17/041 (2006.01); H03K 17/16 (2006.01);
U.S. Cl.
CPC ...
H03K 17/04106 (2013.01); H03K 17/161 (2013.01);
Abstract

A Radio Frequency (RF) switch having two or more stages coupled in series is disclosed. A first Field-Effect Transistor (FET) with a first control terminal is coupled across a gate resistor to shunt the gate resistor when the first FET is on. An RF switching device is configured to pass an RF signal between a signal input and a signal output when the RF switching device is on. A second FET having a second control terminal coupled to an acceleration output is configured to shunt the RF switching device when the second FET is on. A third FET is coupled between the first control terminal and the signal input for controlling charge on a gate of the first FET. A third control terminal of the third FET is coupled to an acceleration input for controlling an on/off state of the third FET.


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