The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 07, 2018

Filed:

Jan. 31, 2013
Applicant:

Hitachi, Ltd., Chiyoda-ku, Tokyo, JP;

Inventors:

Shin Yabuuchi, Tokyo, JP;

Jun Hayakawa, Tokyo, JP;

Yosuke Kurosaki, Tokyo, JP;

Akinori Nishide, Tokyo, JP;

Yuji Suwa, Tokyo, JP;

Assignee:

HITACHI, LTD., Tokyo, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 35/26 (2006.01); H01L 35/32 (2006.01); H01L 35/34 (2006.01); H01L 35/30 (2006.01); H01L 35/00 (2006.01);
U.S. Cl.
CPC ...
H01L 35/26 (2013.01); H01L 35/32 (2013.01); H01L 35/34 (2013.01); H01L 35/00 (2013.01); H01L 35/30 (2013.01);
Abstract

In order to provide a thermoelectric conversion element which has a high Seebeck coefficient, a low thermal conductivity, and a high performance, even if the material system that has a low environmental load and can reduce the cost is used, the thermoelectric conversion element in which lattice points are classified into two or more kinds (A site and B site), lattices of which the kinds are different are connected to each other, the numbers of lattices of which the kinds are different are different (A site: 2, and B site: 1), and a lattice structure is configured by arranging nanoparticles or semiconductor quantum dots, includes areas of which conductivity types are different.


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