The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 07, 2018

Filed:

Jan. 10, 2017
Applicant:

Osram Opto Semiconductors Gmbh, Regensburg, DE;

Inventors:

Korbinian Perzlmaier, Regensburg, DE;

Kai Gehrke, Regensburg, DE;

Robert Walter, Parsberg, DE;

Karl Engl, Pentling, DE;

Guido Weiss, Regensburg, DE;

Markus Maute, Alteglofsheim, DE;

Stefanie Rammelsberger, Zeitlarn, DE;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 33/62 (2010.01); H01L 33/60 (2010.01); H01L 33/38 (2010.01); H01L 33/40 (2010.01); H01L 33/42 (2010.01); H01L 33/56 (2010.01);
U.S. Cl.
CPC ...
H01L 33/60 (2013.01); H01L 33/382 (2013.01); H01L 33/405 (2013.01); H01L 33/42 (2013.01); H01L 33/56 (2013.01); H01L 33/62 (2013.01); H01L 2924/0002 (2013.01);
Abstract

A light emitting diode chip includes a semiconductor layer sequence having an active layer that generates electromagnetic radiation, wherein the light emitting diode chip has a radiation exit area at a front side and a mirror layer at least in regions at a rear side situated opposite the radiation exit area, a protective layer is arranged on the mirror layer, the protective layer includes a transparent conductive oxide, the mirror layer adjoins the semiconductor layer sequence at an interface situated opposite the protective layer, first and second layers, the first and second electrical connection layers face the rear side of the semiconductor layer sequence and are electrically insulated from one another, and a partial region of the second electrical connection layer extends from the rear side of the semiconductor layer sequence through at least one perforation of the active layer in a direction toward the front side.


Find Patent Forward Citations

Loading…