The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 07, 2018
Filed:
Dec. 19, 2017
Xiamen Sanan Optoelectronics Technology Co., Ltd., Xiamen, CN;
Jie Zhang, Xiamen, CN;
Xueliang Zhu, Xiamen, CN;
Chengxiao Du, Xiamen, CN;
Jianming Liu, Xiamen, CN;
Chen-ke Hsu, Xiamen, CN;
XIAMEN SANAN OPTOELECTRONICS TECHNOLOGY CO., LTD., Xiamen, CN;
Abstract
A light-emitting diode (LED) epitaxial structure includes, from bottom to up, a substrate, a first conductive type semiconductor layer, a super lattice, a multi-quantum well layer with V pits, a hole injection layer and a second conductive type semiconductor layer. The hole injection layer appears in the shape of dual hexagonal pyramid, which fills up the V pits and embeds in the second conductive type semiconductor layer. Various embodiments of the present disclosures can effectively reduce point defect density and dislocation density of semiconductor material and effectively enlarge hole injection area and improves hole injection efficiency.