The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 07, 2018

Filed:

Oct. 14, 2014
Applicant:

Luminus Devices, Inc., Sunnyvale, CA (US);

Inventors:

Ting Li, Dublin, CA (US);

Thomas Yuan, Ventura, CA (US);

Assignee:

Luminus Devices, Inc., Woburn, MA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 33/08 (2010.01); H01L 33/00 (2010.01); H01L 33/32 (2010.01); H01L 33/42 (2010.01); H01L 25/075 (2006.01);
U.S. Cl.
CPC ...
H01L 33/08 (2013.01); H01L 33/0079 (2013.01); H01L 33/32 (2013.01); H01L 25/0756 (2013.01); H01L 33/42 (2013.01); H01L 2924/0002 (2013.01);
Abstract

An embodiment of the invention comprises a first III-V semiconductor structure including a first light emitting layer disposed between a first n-type region and a first p-type region, and a second III-V semiconductor structure including a second light emitting layer disposed between a second n-type region and a second p-type region. A first contact is formed on a top surface of the first III-V semiconductor structure. A second contact is formed on a bottom surface of the second III-V semiconductor structure. A bonding structure is disposed between the first and second III-V semiconductor structures.


Find Patent Forward Citations

Loading…