The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 07, 2018
Filed:
Oct. 27, 2016
Applicant:
Sensl Technologies Ltd., County Cork, IE;
Inventors:
Assignee:
SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC, Phoenix, AZ (US);
Primary Examiner:
Int. Cl.
CPC ...
G11C 11/34 (2006.01); G11C 11/36 (2006.01); H01L 31/107 (2006.01); H01L 31/0224 (2006.01); H01L 31/028 (2006.01); H01L 27/144 (2006.01); H01L 31/0216 (2014.01); H01L 31/02 (2006.01); H01L 31/18 (2006.01);
U.S. Cl.
CPC ...
H01L 31/107 (2013.01); H01L 27/1446 (2013.01); H01L 31/028 (2013.01); H01L 31/02027 (2013.01); H01L 31/02161 (2013.01); H01L 31/022408 (2013.01); H01L 31/1804 (2013.01);
Abstract
The present disclosure relates to an avalanche photodiode comprising a substrate having an active area. A first dopant implant in the active area forms one of an anode and the cathode of the avalanche photodiode. A second dopant implant in the active area forming the other one of the anode and the cathode of the avalanche photodiode, wherein at least one of the first and second dopant implants defines a discontinuous formation having at least one interruption.