The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 07, 2018

Filed:

Aug. 13, 2013
Applicant:

The University of Toledo, Toledo, OH (US);

Inventors:

Michael J. Heben, Ottawa Hills, OH (US);

Adam B. Phillips, Toledo, OH (US);

Rajendra R. Khanal, Toledo, OH (US);

Victor V. Plotnikov, Toledo, OH (US);

Alvin D. Compaan, Holland, OH (US);

Assignee:

The University Of Toledo, Toledo, OH (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 31/0224 (2006.01); H01L 31/073 (2012.01); H01L 31/0725 (2012.01); H01L 31/076 (2012.01); B82Y 10/00 (2011.01); B82Y 20/00 (2011.01); H01L 31/0216 (2014.01); H01L 31/075 (2012.01); H01L 31/18 (2006.01); H01L 31/02 (2006.01); H01L 31/077 (2012.01);
U.S. Cl.
CPC ...
H01L 31/022425 (2013.01); B82Y 10/00 (2013.01); B82Y 20/00 (2013.01); H01L 31/02008 (2013.01); H01L 31/02167 (2013.01); H01L 31/022441 (2013.01); H01L 31/073 (2013.01); H01L 31/075 (2013.01); H01L 31/076 (2013.01); H01L 31/077 (2013.01); H01L 31/0725 (2013.01); H01L 31/1828 (2013.01); Y02E 10/50 (2013.01); Y02E 10/543 (2013.01); Y02E 10/548 (2013.01);
Abstract

A photovoltaic cell structure is disclosed that includes a back contact layer that includes single wall carbon nanotube elements. The single wall carbon nanotube (SWNT) back contact is in electrical communication with an adjacent semiconductor layer and provides a buffer characteristic that impedes elemental metal migration from the back contact into the semiconductor active layers. In one embodiment, the SWNT back contact includes a semiconductor characteristic and a buffer characteristic. In another embodiment, the SWNT back contact further includes a metallic characteristic.


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