The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 07, 2018
Filed:
Mar. 17, 2015
Semiconductor Energy Laboratory Co., Ltd., Atsugi-shi, Kanagawa-ken, JP;
Akihisa Shimomura, Kanagawa, JP;
Yuhei Sato, Kanagawa, JP;
Yasumasa Yamane, Kanagawa, JP;
Shunpei Yamazaki, Tokyo, JP;
Kenichi Okazaki, Tochigi, JP;
Chiho Kawanabe, Tochigi, JP;
Semiconductor Energy Laboratory Co., Ltd., Atsugi-shi, Kanagawa-ken, JP;
Abstract
A semiconductor device with favorable electrical characteristics is provided. In an oxide semiconductor film, a plurality of electron diffraction patterns are observed in such a manner that a surface over which the oxide semiconductor film is formed is irradiated with an electron beam having a probe diameter whose half-width is 1 nm while the position of the film and the position of the electron beam are relatively moved. The electron diffraction patterns include 50 or more electron diffraction patterns observed in different areas. The sum of the percentage of first electron diffraction patterns and the percentage of second electron diffraction patterns accounts for 100%. The first electron diffraction patterns account for 50% or more. The first electron diffraction pattern includes observation points that are not symmetry or observation points disposed in a circular pattern. The second electron diffraction pattern includes observation points corresponding to the vertices of a hexagon.