The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 07, 2018
Filed:
Dec. 12, 2013
Boe Technology Group Co., Ltd., Beijing, CN;
Beijing Boe Optoelectronics Technology Co., Ltd., Beijing, CN;
Changjiang Yan, Beijing, CN;
Xiaowei Jiang, Beijing, CN;
Xiaohui Jiang, Beijing, CN;
Zhenyu Xie, Beijing, CN;
Xu Chen, Beijing, CN;
BOE TECHNOLOGY GROUP CO., LTD., Beijing, CN;
BEIJING BOE OPTOELECTRONICS TECHNOLOGY CO., LTD., Beijing, CN;
Abstract
A thin film transistor (TFT), a method for fabricating the same, an array substrate and a display device are provided. The TFT includes a source electrode and a drain electrode, a semiconductor active layer, a gate insulating layer and a gate electrode. The TFT further includes a light-shielding layer between the source electrode and the drain electrode. The light-shielding layer separates the source electrode and the drain electrode, and the light-shielding layer is disposed on a light incident side of the semiconductor active layer and is used to prevent the incident light from irradiating on the semiconductor active layer.