The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 07, 2018
Filed:
Jun. 26, 2017
Semiconductor Components Industries, Llc, Phoenix, AZ (US);
Thierry Yao, Portland, OR (US);
SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC, Phoenix, AZ (US);
Abstract
A Laterally Diffused MOSFET (LDMOS) device architecture particularly suitable for use in tight pitch environments such as for line drivers in an integrated memory application. In one embodiment, an illustrative high-voltage MOSFET device includes: a body (a semiconductor of a first conductivity type), a source region (a semiconductor of a second conductivity type) at a source active area and positioned within or adjacent to the body, a drift region (a lightly-doped semiconductor of the second conductivity type) positioned adjacent to the body, and a gate overlying at least a portion of the body and at least a portion of the drift region to form a controllable channel between the source region and the drift region. To increase the drain breakdown voltage, a width dimension of the drift region is formed to be sufficiently small for a depletion zone to extend across a full width of the drift region.