The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 07, 2018
Filed:
Oct. 03, 2017
Geumjung Seong, Seoul, KR;
Jinwook Lee, Seoul, KR;
Dohyoung Kim, Hwaseong-si, KR;
Sungwoo Myung, Seoul, KR;
Jisoo OH, Incheon, KR;
Yong-ho Jeon, Hwaseong-si, KR;
GeumJung Seong, Seoul, KR;
JinWook Lee, Seoul, KR;
Dohyoung Kim, Hwaseong-si, KR;
Sungwoo Myung, Seoul, KR;
Jisoo Oh, Incheon, KR;
Yong-Ho Jeon, Hwaseong-si, KR;
Abstract
The inventive concept relates to a semiconductor device and a method for fabricating the same. The semiconductor device comprises active patterns protruding from a substrate, an interlayer dielectric layer disposed on the substrate and including grooves exposing the active patterns, and gate electrodes in the grooves. The grooves include a first groove having a first width and a second groove having a second width greater than the first width. The gate electrodes include a first gate electrode in the first groove, and a second gate electrode in the second groove. Each of the first and second gate electrodes includes a first work function conductive pattern on a bottom surface and sidewalls of corresponding one of the first and second grooves, and a second work function conductive pattern on the first work function conductive pattern.