The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 07, 2018
Filed:
Mar. 03, 2016
Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;
Kyoung Hwan Yeo, Seoul, KR;
Seonguk Park, Suwon-si, KR;
Seungjae Lee, Hwaseong-si, KR;
Doyoung Choi, Hwaseong-si, KR;
Sunhom Steve Paak, Seoul, KR;
Tae Eung Yoon, Seoul, KR;
Dongho Cha, Seongnam-si, KR;
Ruiyi Chen, Suwon-si, KR;
SAMSUNG ELECTRONICS CO., LTD., Suwon-si, Gyeonggi-Do, KR;
Abstract
Provided is a semiconductor device with a field effect transistor. The semiconductor device includes a substrate, an active pattern on the substrate, a gate electrode crossing the active pattern and a capping structure on the gate electrode. The capping structure includes first and second capping patterns that are sequentially stacked on the gate electrode. The second capping pattern completely covers a top surface of the first capping pattern, and a dielectric constant of the second capping pattern is greater than that of the first capping pattern.