The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 07, 2018
Filed:
Apr. 06, 2017
Applicants:
Franck Natali, Porirua, NZ;
Stéphane Ange Vézian, Grasse, FR;
Inventors:
Franck Natali, Porirua, NZ;
Stéphane Ange Vézian, Grasse, FR;
Assignee:
ECOLE POLYTECHNIQUE FEDERALE DE LAUSANNE (EPFL), Lausanne, CH;
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/15 (2006.01); H01L 29/267 (2006.01); H01L 29/20 (2006.01); H01L 29/04 (2006.01); H01L 29/24 (2006.01); H01L 21/02 (2006.01);
U.S. Cl.
CPC ...
H01L 29/267 (2013.01); H01L 21/0254 (2013.01); H01L 21/02458 (2013.01); H01L 21/02609 (2013.01); H01L 29/045 (2013.01); H01L 29/2003 (2013.01); H01L 29/24 (2013.01);
Abstract
Structure or device comprises a AlGaN or InGaN layer or substrate, a rare earth nitride epitaxial layer, and an AlGaN epitaxial interlayer between the rare earth nitride epitaxial layer and the AlGaN or InGaN layer or substrate. The interlayer is in direct contact with the rare earth nitride epitaxial layer and the AlGaN or InGaN layer or substrate.