The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 07, 2018
Filed:
Mar. 11, 2016
Applicant:
Toshiba Memory Corporation, Minato-ku, Tokyo, JP;
Inventor:
Hiroyuki Kanaya, Seoul, KR;
Assignee:
TOSHIBA MEMORY CORPORATION, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/22 (2006.01); H01L 43/02 (2006.01); H01L 43/08 (2006.01); H01L 23/528 (2006.01); H01L 43/12 (2006.01); G11C 11/16 (2006.01);
U.S. Cl.
CPC ...
H01L 27/228 (2013.01); H01L 23/528 (2013.01); H01L 43/02 (2013.01); H01L 43/08 (2013.01); H01L 43/12 (2013.01); G11C 11/1659 (2013.01);
Abstract
According to one embodiment, a magnetoresistive memory device includes first electrodes located in an interlayer insulating film, second electrodes located on the respective first electrodes within the interlayer insulating film, magnetoresistive effect elements on the respective second electrodes, and third electrodes on the respective magnetoresistive effect elements. The first electrodes and the second electrodes are displaced from each other.