The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 07, 2018
Filed:
Mar. 01, 2017
Applicant:
Sii Semiconductor Corporation, Chiba-shi, Chiba, JP;
Inventor:
Toshiro Futatsugi, Chiba, JP;
Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/146 (2006.01); H01L 29/66 (2006.01); H01L 29/78 (2006.01);
U.S. Cl.
CPC ...
H01L 27/14689 (2013.01); H01L 27/14616 (2013.01); H01L 27/14685 (2013.01); H01L 29/66492 (2013.01); H01L 29/7833 (2013.01);
Abstract
In order to form a light receiving element having high reliability and a MOS transistor together on the same silicon substrate, after forming a gate electrode of the MOS transistor, a gate oxide film in a light receiving element forming region is removed. Then, a thermal oxide film is newly formed in the light receiving element forming region, and ion implantation is performed in the light receiving element forming region through the thermal oxide film such that a shallow pn junction is formed.