The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 07, 2018
Filed:
Dec. 15, 2016
Vanguard International Semiconductor Corporation, Hsinchu, TW;
Vanguard International Semiconductor Corporation, Hsinchu, TW;
Abstract
The present disclosure relates to a semiconductor device. The semiconductor device includes a semiconductor on an insulator (SOI) substrate having a bottom substrate, a buried oxide layer on the bottom substrate, and a semiconductor layer on the buried oxide layer. The semiconductor device also includes a first dielectric layer disposed on the semiconductor layer, a first contact structure extending from a top surface of the first dielectric layer through the semiconductor layer and the buried oxide layer and contacting the bottom substrate, and a first trench extending into the semiconductor layer. A width of the first trench is smaller than a width of the first contact structure. The first dielectric layer seals the first trench at or near the top of the first trench to form a vacuum gap.