The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 07, 2018
Filed:
Sep. 15, 2017
Toshiba Memory Corporation, Minato-ku, JP;
Tsutomu Tezuka, Yokohama, JP;
Fumitaka Arai, Yokkaichi, JP;
Keiji Ikeda, Kawasaki, JP;
Tomomasa Ueda, Yokohama, JP;
Nobuyoshi Saito, Tokyo, JP;
Chika Tanaka, Fujisawa, JP;
Kentaro Miura, Kawasaki, JP;
Toshiba Memory Corporation, Minato-ku, JP;
Abstract
According to one embodiment, a semiconductor memory includes: a first gate of a first select transistor and a second gate of a second select transistor on a gate insulating film on a semiconductor layer; an oxide semiconductor layer above the semiconductor layer; a first control gate of a first cell and a second control gate of a second cell on an insulating layer on the oxide semiconductor layer; a third gate of a first transistor between the first control gate and the second control gate; a fourth gate of a second transistor between a first end of the oxide semiconductor layer and the second control gate; an interconnect connected to the first end; a source line connected to the first select transistor; and a bit line connected to the second select transistor.