The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 07, 2018

Filed:

Nov. 08, 2016
Applicant:

Analog Devices, Inc., Norwood, MA (US);

Inventors:

Edward John Coyne, Limerick, IE;

Patrick Martin McGuinness, Limerick, IE;

Paul Malachy Daly, Limerick, IE;

Bernard Patrick Stenson, Limerick, IE;

David J. Clarke, Limerick, IE;

Andrew David Bain, Limerick, IE;

William Allan Lane, Cork, IE;

Assignee:

Analog Devices, Inc., Norwood, MA (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/331 (2006.01); H01L 23/60 (2006.01); H01L 27/02 (2006.01); H01L 29/66 (2006.01); H01L 29/735 (2006.01); H01L 29/06 (2006.01); H01L 29/08 (2006.01); H01L 29/40 (2006.01);
U.S. Cl.
CPC ...
H01L 27/0259 (2013.01); H01L 29/0692 (2013.01); H01L 29/0821 (2013.01); H01L 29/402 (2013.01); H01L 29/6625 (2013.01); H01L 29/735 (2013.01);
Abstract

An apparatus including an electrostatic discharge (ESD) protection device comprising a semiconductor having first, second and third regions arranged to form a transistor, wherein the first region is doped with a first impurity of a first conductivity type and is separated from the second region which is doped with a second impurity of a second conductivity type opposite the first type, and wherein a dimensional constraint of the regions defines an operational threshold of the ESD protection device. In one example, the separation between a collector and an emitter of a bipolar transistor defines a trigger voltage to cause the electrostatic discharge protection device to become conducting. In another example, a width of a bipolar transistor base controls a holding voltage of the electrostatic discharge protection device.


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