The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 07, 2018
Filed:
Feb. 15, 2018
Renesas Electronics Corporation, Tokyo, JP;
Kazuo Tomita, Tokyo, JP;
Keiichi Yamada, Tokyo, JP;
Renesas Electronics Corporation, Tokyo, unknown;
Abstract
In a semiconductor device (SD), plate-shaped upper electrodes (UEL) are formed on a lower electrode (LEL) with a dielectric film (DEC) interposed therebetween. The lower electrode (LEL), the dielectric film (DEC), and the upper electrodes (UEL) constitute MIM capacitors (MCA). One of the upper electrodes (UEL) and another upper electrode (UEL) that are adjacent to each other are arranged at an equal distance (D), without the guard ring being interposed therebetween. The upper electrodes (UEL) positioned on the outermost periphery and the guard ring (GR) positioned outside those upper electrodes UEL are arranged at a distance equal to the distance (D) from each other.