The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 07, 2018

Filed:

Mar. 21, 2017
Applicant:

Lg Display Co., Ltd., Seoul, KR;

Inventors:

Hee-Jung Yang, Yangju-si, KR;

Hyung-Tae Kim, Goyang-si, KR;

Jae-Young Jeong, Goyang-si, KR;

Gyu-Won Han, Yeoju-gun, KR;

Dong-Sun Kim, Goyang-si, KR;

Won-Joon Ho, Jeonju-si, KR;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/428 (2006.01); H01L 29/66 (2006.01); H01L 27/12 (2006.01); H01L 29/786 (2006.01); H01L 29/08 (2006.01); H01L 21/4757 (2006.01);
U.S. Cl.
CPC ...
H01L 21/428 (2013.01); H01L 21/4757 (2013.01); H01L 27/1225 (2013.01); H01L 29/0847 (2013.01); H01L 29/66969 (2013.01); H01L 29/7869 (2013.01);
Abstract

A method of fabricating an array substrate including forming an oxide semiconductor layer on a substrate; sequentially forming a gate insulating layer and a gate electrode corresponding to a central portion of the oxide semiconductor layer; forming source and drain areas having conductive properties in the oxide semiconductor layer by irradiating X-rays or UV rays to the oxide semiconductor layer exposed outside the gate electrode; forming an inter insulating layer on the gate electrode and having first contact holes that expose the source and drain areas; and forming source and drain electrodes on the inter insulating layer and contacting the source and drain areas through the first contact holes, respectively.


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