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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 10043654 B1

PDFFull Text
Date of Patent:
Aug. 07, 2018

Filed:

Feb. 18, 2015

Method for rinsing compound semiconductor, solution for rinsing compound semiconductor containing gallium as constituent element, method for fabricating compound semiconductor device, method for fabricating gallium nitride substrate, and gallium nitride substrate

Applicants:

Sumitomo Electric Industries, Ltd., Osaka-shi, JP;

Tohoku University, Sendai-shi, JP;

Inventors:

Kenji Nagao, Itami, JP;

Kenichi Nakamura, Itami, JP;

Akinobu Teramoto, Sendai, JP;

Assignees:

Sumitomo Electric Industries, Ltd., Osaka-shi, JP;

TOHOKU UNIVERSITY, Sendai-shi, JP;

Attorneys:

Venable LLP

Michael A. Sartori

Miguel A. Lopez

Primary Examiner:

Phat X Cao

Int. Cl.
CPC ...
H01L 21/02 (2006.01); C30B 29/38 (2006.01); C30B 23/02 (2006.01); C30B 25/18 (2006.01); B08B 3/08 (2006.01); B08B 3/10 (2006.01); H01L 21/311 (2006.01);
U.S. Cl.
CPC ...
H01L 21/02052 (2013.01); B08B 3/08 (2013.01); B08B 3/10 (2013.01); C30B 23/025 (2013.01); C30B 25/186 (2013.01); C30B 29/38 (2013.01); H01L 21/02389 (2013.01); H01L 21/31144 (2013.01); B08B 2203/007 (2013.01);
Abstract

A method for rinsing a compound semiconductor, the method including a step of rinsing a compound semiconductor at a temperature of 80 degrees centigrade or higher with an aqueous solution of sulfuric acid of 50 wt % or less in purified water, the aqueous solution having a hydrogen ion concentration of pH 2 or less and an oxidation-reduction potential of 0.6 volts or higher, the compound semiconductor containing gallium as a constituent element, and the compound semiconductor having a surface of gallium nitride (GaN).

Find Patent Forward Citations

Nagao, Kenji. (2018). Method for rinsing compound semiconductor, solution for rinsing compound semiconductor containing gallium as constituent element, method for fabricating compound semiconductor device, method for fabricating gallium nitride substrate, and gallium nitride substrate (U.S. Patent No. 10043654). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/10043654

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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