The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 07, 2018
Filed:
Apr. 21, 2017
SK Hynix Inc., Icheon-Si, KR;
June-Seo Kim, Icheon-si, KR;
Min-Suk Lee, Seongnam-si, KR;
Jung-Hwan Moon, Icheon-si, KR;
Bo-Kyung Jung, Cheongju-si, KR;
Jeong-Myeong Kim, Hwaseong-si, KR;
Ji-Hun Park, Icheon-si, KR;
SK hynix Inc., Icheon-si, KR;
Abstract
In one implementation, an electronic device is provided to include a semiconductor memory, wherein the semiconductor memory may include: a variable resistance element including a Magnetic Tunnel Junction (MTJ) structure including a free layer having a changeable magnetization direction free layer, a pinned layer having a fixed magnetization direction and a tunnel barrier layer interposed between the free layer and the pinned layer, and the electronic device may further include, in a first direction in which the free layer, the tunnel barrier layer and the pinned layer are arranged, a first permanent magnet having a first surface facing a first surface of the variable resistance element and spaced from the variable resistance element, wherein a magnetic field generated by the first permanent magnet may have a direction which offsets or reduces an influence of a stray field generated by the pinned layer.