The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 07, 2018

Filed:

Nov. 20, 2017
Applicant:

Renesas Electronics Corporation, Tokyo, JP;

Inventors:

Naoya Arisaka, Tokyo, JP;

Masataka Minami, Tokyo, JP;

Takahiro Miki, Tokyo, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G01K 7/01 (2006.01); H03K 21/38 (2006.01); H03K 21/00 (2006.01);
U.S. Cl.
CPC ...
G01K 7/01 (2013.01); H03K 21/00 (2013.01); H03K 21/38 (2013.01); G01K 2217/00 (2013.01); G01K 2219/00 (2013.01);
Abstract

A method of sensing a temperature of a semiconductor device, includes: measuring, by a time measuring circuit, time until a count value, which is obtained from a counter by counting a first signal having a frequency corresponding to a first voltage, reaches a largest count value which can be counted by the counter; and obtaining, by the counter, a piece of digital information corresponding to the first voltage based on a count value obtained by counting a second signal having a frequency corresponding to a second voltage, which is different from the first voltage, based on the time measured by the time measuring circuit, the first voltage depending upon the temperature of the semiconductor device.


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